 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SUM23N15-73 Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 150 rDS(on) (W) 0.073 @ VGS = 10 V 0.077 @ VGS = 6 V ID (A) 23 22.5 D D D D TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized APPLICATIONS D Primary Side Switch D TO-263 G G DS S Top View Ordering Information: SUM23N15-73 N-Channel MOSFET SUM23N15-73 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 150 "20 23 13.4 35 25 31 100b 3.75 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case (Drain) Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72143 S-03535--Rev. A, 24-Mar-03 www.vishay.com Mount)c Symbol RthJA RthJC Limit 40 1.5 Unit _C/W 1 SUM23N15-73 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 120 V, VGS = 0 V, TJ = 125_C VDS = 120 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Drain Source On State Resistancea VGS = 10 V, ID = 15 A, TJ = 125_C rDS( ) DS(on) VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 6 V, ID = 10 A Forward Transconductancea gfs VDS = 15 V, ID = 25 A 10 0.062 35 0.059 0.073 0.140 0.168 0.077 S W 150 V 2 4 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf VDD = 75 V, RL = 3.26 W ID ^ 23 A, VGEN = 10 V, RG = 2.5 W VDS = 75 V, VGS = 10 V, ID = 23 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 1290 160 70 22 6 7.5 4.0 10 60 30 45 15 90 43 70 ns W 35 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 23 A, di/dt = 100 A/ms IF = 23 A, VGS = 0 V 1.0 100 5 0.25 35 23 1.5 150 8 0.6 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72143 S-03535--Rev. A, 24-Mar-03 SUM23N15-73 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 35 30 I D - Drain Current (A) 25 20 15 10 5 0 0 3 6 9 4V 12 15 0 0 1 2 3 4 5 6 VGS = 10 thru 6 V 28 I D - Drain Current (A) 35 Transfer Characteristics 21 14 TC = 125_C 7 25_C - 55_C 5V VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 50 TC = - 55_C r DS(on) - On-Resistance ( W ) 40 g fs - Transconductance (S) 25_C 30 125_C 0.09 0.12 On-Resistance vs. Drain Current VGS = 6 V 0.06 VGS = 10 V 0.03 20 10 0 0 5 10 15 20 25 30 0.00 0 5 10 15 20 25 30 35 ID - Drain Current (A) ID - Drain Current (A) Capacitance 2000 20 Gate Charge 1600 C - Capacitance (pF) Ciss 1200 V GS - Gate-to-Source Voltage (V) 16 VDS = 75 V ID = 23 A 12 800 8 400 Crss 4 Coss 0 0 30 60 90 120 150 0 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) Document Number: 72143 S-03535--Rev. A, 24-Mar-03 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM23N15-73 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.7 2.4 r DS(on) - On-Resistance (W) (Normalized) 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 - 50 1 0 I S - Source Current (A) VGS = 10 V ID = 15 A 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C - 25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 190 180 V (BR)DSS (V) ID = 1.0 mA 170 160 150 140 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72143 S-03535--Rev. A, 24-Mar-03 SUM23N15-73 Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 25 100 Safe Operating Area Limited by rDS(on) 20 I D - Drain Current (A) I D - Drain Current (A) 10 10 ms 100 ms 15 1 ms 10 ms TC = 25_C Single Pulse 100 ms dc 10 1 5 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Document Number: 72143 S-03535--Rev. A, 24-Mar-03 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of SUM23N15-73
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |